SnSe with low dimensionality has been reported as an appealing material with a diverse range of applications such as rechargeable lithium-ion batteries, memory switching devices, solar energy conversion, thermoelectric energy conversion, and near-infrared optoelectronic devices. In present investigations the structural properties of nanoparticles of Tin Selenide (SnSe) of group IV-VI semiconductors is reported. In this review, we focus on the recent research progress in the area of design and synthesis of tin sulfides and selenides (SnS, SnS2, SnSe, and SnSe2) based anode materials for LIBs and NIBs. This is the highest value reported to date. Car et al. Tin Selenide is a narrow band gap binary IV-VI semiconductor material. Tin selenide (SnSe) is a newly emerging layered material. of Physics, Ain Shams University, Cairo. Tin is a silvery, soft and pliable metal which resists corrosion. It is also suitable for various optoelectronic applications like memory switching devices, light emitting devices (LED), holographic recording systems among others. Introduction. The nanocrystalline Tin selenide. In 2014, researchers at Northwestern University discovered that tin selenide (SnSe) has a ZT of 2.6 along the b axis of the unit cell. Applications. 3 Soliman et al. Unlike tin oxides which are insulators, tin selenide is a narrow band gap semiconductor and is considered to be a promising material for several applications such as solar cells, optoelectronic devices and memory switching devices , , . (1962)): 0.9 eV 2. Tin selenide offer a range of optical band gaps suitable for various optical and optoelectronic applications. It is one of the promising materials from its applications. Tin selenide Layered tin sulfides have attracted great interest as high-capacity anode materials in Li-ion batteries (LIBs) and Na-ion batteries (NIBs). Tin selenide can exist in two phases- hexagonal-phase SnSe 2 and orthorhombic-phase SnSe . Tin Selenide (SnSe) thin films were prepared from the pulverized compound material by thermal evaporation method, to study the effect of film thickness on its structural, and optical properties. (1978) –Istituto di Fisica del Politecnico, Milano Calculated bandgap: 2.1 eV Experimental value (Albers et al. The diode characteristics such as short circuit current (Isc),open circuit voltage (Voc),fill factor (FF) and conversion coefficient (11) of the solar cell will be determined. SnSe powder has been prepared using chemical precipitation method in deionized water. It is thus capable of absorbing a major portion of solar energy hence its use in fabricating solar cells. (1995) –Dept. Tin Selenide a p type and Nickel doped tin oxide n type deposited on a glass substrate will form a p-n junction. The chemical name for tin is stannum and is represented by Sn. This high ZT figure of merit has been attributed to an extremely low thermal conductivity found in the SnSe lattice. The different thicknesses of SnSe thin films, from 150 nm to 500 nm, were grown on glass substrate held at room temperature. The atomic number of tin is 50 and it is a period 4, group 4 element in the periodic table. 4 Tin monoselenide (SnSe) and tin diselenide (SnSe 2) are promising candidates for solar cell applications, memory switching devices, etc , . for Tin Selenide Dr. HoSung Lee April 2, 2015 1. Tin selenide was synthesized by mechanical alloying method and the films were grown by economic screen-printing method on glass substrate. The source materials used for the preparation of films were tin selenide and stannic chloride. 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